Riikka Puurunen

Photographer: Erkki Pöytäniemi

PuurunenAalto University

Riikka Puurunen

Professori (Associate professor), Department of Chemical and Metallurgical Engineering

What do you do?

What do you do?

Associate professor (tenure track), Catalysis Science and Technology. Strong background and continued interest in Atomic Layer Deposition (ALD); aiming to build research e.g. with microreactors and in situ/operando measurements. "Work-hobby:" history of ALD; interested in open science approaches. Feb-Jul 2017 working 60% at Aalto University and 40% at VTT Technical Reseach Centre of Finland; from Aug 2017 on, full time at Aalto University. Open for new (and old!) collaborations. 


This person in ResearcherID.com.

Contact information

Work street address
Kemistintie 1
02150
Espoo
Finland
Work postal address
P.O. Box 16100
00076
AALTO
Finland
Room number
E412
Work email
riikka.puurunen at aalto.fi
Twitter
http://twitter.com/@rlpuu

Publications

Peer-reviewed scientific articles

Journal article-refereed, Original research

Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition Growth and mechanical properties

Ylivaara, Oili M E; Kilpi, Lauri; Liu, Xuwen; Sintonen, Sakari; Ali, Saima; Laitinen, Mikko; Julin, Jaakko; Haimi, Eero; Sajavaara, Timo; Lipsanen, Harri; Hannula, Simo Pekka; Ronkainen, Helena; Puurunen, Riikka 

2017 

JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A 

ISSN: 0734-2101 

Thermal conductivity of amorphous Al2O3/TiO2 nanolaminates deposited by atomic layer deposition

Ali, Saima; Juntunen, Taneli; Sintonen, Sakari; Ylivaara, Oili M E; Puurunen, Riikka; Lipsanen, Harri; Tittonen, Ilkka; Hannula, Simo Pekka 

2016 

NANOTECHNOLOGY 

ISSN: 0957-4484 

Nucleation and Conformality of Iridium and Iridium Oxide Thin Films Grown by Atomic Layer Deposition

Mattinen, Miika; Hämäläinen, Jani; Gao, Feng; Jalkanen, Pasi; Mizohata, Kenichiro; Räisänen, Jyrki; Puurunen, Riikka L.; Ritala, Mikko; Leskelä, Markku 

2016 

LANGMUIR 

ISSN: 0743-7463 

Fracture properties of atomic layer deposited aluminum oxide free-standing membranes

Berdova, Maria; Ylivaara, Oili M. E.; Rontu, Ville; Törmä, Pekka T.; Puurunen, Riikka; Franssila, Sami 

2015 

JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A 

ISSN: 0734-2101 

Microscopic silicon-based lateral high-aspect-ratio structures for thin film conformality analysis

Gao, Feng; Arpiainen, Sanna; Puurunen, Riikka L. 

2015 

JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A 

ISSN: 0734-2101 

Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors

Putkonen, Matti; Bosund, M.; Ylivaara, Oili M. E.; Puurunen, Riikka; Kilpi, L.; Ronkainen, H.; Sintonen, S.; Ali, S.; Lipsanen, H.; Liu, Xuwen; Haimi, Eero; Hannula, Simo-Pekka; Sajavaara, T.; Buchanan, I.; Karwacki, E.; Vähä-Nissi, M. 

2014 

THIN SOLID FILMS 

ISSN: 0040-6090 

Silicon full wafer bonding with atomic layer deposited titanium dioxide and aluminum oxide intermediate films

Puurunen, R. L.; Suni, T.; Ylivaara, O. M E; Kondo, H.; Ammar, M.; Ishida, T.; Fujita, H.; Bosseboeuf, A.; Zaima, S.; Kattelus, H. 

2012 

SENSORS AND ACTUATORS A: PHYSICAL 

ISSN: 0924-4247 

Reducing stiction in microelectromechanical systems by rough nanometer-scale films grown by atomic layer deposition

Puurunen, R. L.; Häärä, A.; Saloniemi, H.; Dekker, J.; Kainlauri, M.; Pohjonen, H.; Suni, T.; Kiihamäki, J.; Santala, E.; Leskelä, M.; Kattelus, H. 

2012 

SENSORS AND ACTUATORS A: PHYSICAL 

ISSN: 0924-4247 

Depth profiling of Al2O3 + TiO2 nanolaminates by means of a time-of-flight energy spectrometer

Laitinen, M.; Sajavaara, T.; Rossi, M.; Julin, J.; Puurunen, R. L.; Suni, T.; Ishida, T.; Fujita, H.; Arstila, K.; Brijs, B.; Whitlow, H. J. 

2011 

NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION B: BEAM INTERACTIONS WITH MATERIALS AND ATOMS 

ISSN: 0168-583X 

Thin film absorbers for visible, near-infrared, and short-wavelength infrared spectra

Laamanen, M.; Blomberg, M.; Puurunen, R. L.; Miranto, A.; Kattelus, H. 

2010 

SENSORS AND ACTUATORS A: PHYSICAL 

ISSN: 0924-4247 

Inductively coupled plasma etching of amorphous Al2O3 and TiO2 mask layers grown by atomic layer deposition

Dekker, J.; Kolari, K.; Puurunen, R. L. 

2006 

Journal of Vacuum Science and Technology. Part B. 

ISSN: 1071-1023 

Nucleation of atomic-layer-deposited HfO 2 films, and evolution of their microstructure, studied by grazing incidence small angle x-ray scattering using synchrotron radiation

Green, M. L.; Allen, A. J.; Li, X.; Wang, J.; Ilavsky, J.; Delabie, A.; Puurunen, R. L.; Brijs, B. 

2006 

APPLIED PHYSICS LETTERS 

ISSN: 0003-6951 

Comment on "analysis of hydroxyl group controlled atomic layer deposition of hafnium oxide from hafnium tetrachloride and water" [J. Appl. Phys. 95, 477 (2204)]

Alam, M. A.; Green, M. L.; Puurunen, Riikka L. 

2005 

JOURNAL OF APPLIED PHYSICS 

ISSN: 0021-8979 

Atomic layer deposition of hafnium oxide on germanium substrates

Delabie, Annelies; Puurunen, Riikka L.; Brijs, Bert; Caymax, Matty; Conard, Thierry; Onsia, Bart; Richard, Olivier; Vandervorst, Wilfried; Zhao, Chao; Heyns, Marc M.; Meuris, Marc; Viitanen, Minna M.; Brongersma, Hidde H.; De Ridder, Marco; Goncharova, Lyudmila V.; Garfunkel, Eric; Gustafsson, Torgny; Tsai, Wilman 

2005 

JOURNAL OF APPLIED PHYSICS 

ISSN: 0021-8979 

Grazing incidence-X-ray fluorescence spectrometry for the compositional analysis of nanometer-thin high-κ dielectric HfO2 layers

Hellin, David; Delabie, Annelies; Puurunen, Riikka L.; Beaven, Peter; Conard, Thierry; Brijs, Bert; De Gendt, Stefan; Vinckier, Chris 

2005 

ANALYTICAL SCIENCES 

ISSN: 0910-6340 

The future of high-K on pure germanium and its importance for Ge CMOS

Meuris, M.; Delabie, A.; Van Elshocht, S.; Kubicek, S.; Verheyen, P.; De Jaeger, B.; Van Steenbergen, J.; Winderickx, G.; Van Moorhem, E.; Puurunen, R. L.; Brijs, B.; Caymax, M.; Conard, T.; Richard, O.; Vandervorst, W.; Zhao, C.; De Gendt, S.; Schram, T.; Chiarella, T.; Onsia, B.; Teerlinck, I.; Houssa, M.; Mertens, P. W.; Raskin, G.; Mijlemans, P.; Biesemans, S.; Heyns, M. M. 

2005 

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 

ISSN: 1369-8001 

Surface chemistry of atomic layer deposition A case study for the trimethylaluminum/water process

Puurunen, Riikka L. 

2005 

JOURNAL OF APPLIED PHYSICS 

ISSN: 0021-8979 

Erratum Random deposition as a growth mode in atomic layer deposition (Chemical Vapor Deposition (2004) 10 (159))

Puurunen, Riikka L. 

2005 

CHEMICAL VAPOR DEPOSITION 

ISSN: 0948-1907 

Correlation between the growth-per-cycle and the surface hydroxyl group concentration in the atomic layer deposition of aluminum oxide from trimethylaluminum and water

Puurunen, Riikka L. 

2005 

APPLIED SURFACE SCIENCE 

ISSN: 0169-4332 

Hafnium oxide films by atomic layer deposition for high- κ gate dielectric applications Analysis of the density of nanometer-thin films

Puurunen, Riikka L.; Delabie, Annelies; Van Elshocht, Sven; Caymax, Matty; Green, Martin L.; Brijs, Bert; Richard, Olivier; Bender, Hugo; Conard, Thierry; Hoflijk, Ilse; Vandervorst, Wilfried; Hellin, David; Vanhaeren, Danielle; Zhao, Chao; De Gendt, Stefan; Heyns, Marc 

2005 

APPLIED PHYSICS LETTERS 

ISSN: 0003-6951 

Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon Growth mode modeling and transmission electron microscopy

Puurunen, Riikka L.; Vandervorst, Wilfried; Besling, Wim F A; Richard, Olivier; Bender, Hugo; Conard, Thierry; Zhao, Chao; Delabie, Annelies; Caymax, Matty; De Gendt, Stefan; Heyns, Marc; Viitanen, Minna M.; De Ridder, Marco; Brongersma, Hidde H.; Tamminga, Yde; Dao, Thuy; De Win, Toon; Verheijen, Marcel; Kaiser, Monja; Tuominen, Marko 

2004 

JOURNAL OF APPLIED PHYSICS 

ISSN: 0021-8979 

Analysis of hydroxyl group controlled atomic layer deposition of hafnium dioxide from hafnium tetrachloride and water

Puurunen, Riikka L. 

2004 

JOURNAL OF APPLIED PHYSICS 

ISSN: 0021-8979 

Island growth as a growth mode in atomic layer deposition A phenomenological model

Puurunen, Riikka L.; Vandervorst, Wilfried 

2004 

JOURNAL OF APPLIED PHYSICS 

ISSN: 0021-8979 

Review article, Literature review, Systematic review

A short history of atomic layer deposition Tuomo Suntola's atomic layer epitaxy

Puurunen, Riikka L. 

2014 

CHEMICAL VAPOR DEPOSITION 

ISSN: 0948-1907 

Crystallinity of inorganic films grown by atomic layer deposition Overview and general trends

Miikkulainen, Ville; Leskelä, Markku; Ritala, Mikko; Puurunen, Riikka L. 

2013 

JOURNAL OF APPLIED PHYSICS 

ISSN: 0021-8979 

Formation of metal oxide particles in atomic layer deposition during the chemisorption of metal chlorides A review

Puurunen, Riikka L. 

2005 

CHEMICAL VAPOR DEPOSITION 

ISSN: 0948-1907 

Book section, Chapters in research books

Low-temperature processes for MEMS device fabrication

Kiihamäki, Jyrki; Kattelus, Hannu; Blomberg, Martti; Puurunen, Riikka; Laamanen, Mari; Pekko, Panu; Saarilahti, Jaakko; Ritala, Heini; Rissanen, Anna 

2010 

NATO Science for Peace and Security Series B: Physics and Biophysics 

ISBN: 9789048138050 

ISSN: 1874-6500 

Atomic Layer Deposition in MEMS Technology

Puurunen, Riikka L.; Kattelus, Hannu; Suntola, Tuomo 

2010 

Elsevier Inc. 

ISBN: 9780815515944 

Conference proceedings

Use of ALD thin film bragg mirror stacks in tuneable visible light mems fabry-perot interferometers

Rissanen, Anna; Puurunen, Riikka L. 

2012 

ISBN: 9780819488923 

Direct wafer bonding of atomic layer deposited TiO2 and Al 2O3 thin films

Puurunen, R. L.; Suni, T.; Ylivaara, O.; Kondo, H.; Ammar, M.; Ishida, T.; Fujita, H.; Bosseboeuf, A.; Zaima, S.; Kattelus, H. 

2011 

ISBN: 9781457701573 

Vapor-phase self-assembled monolayers for improved MEMS reliability

Rissanen, Anna; Tappura, Kirsi; Laamanen, Mari; Puurunen, Riikka; Färm, Elina; Ritala, Mikko; Leskelä, Markku 

2010 

ISBN: 9781424481682 

Bonding of ALD alumina for advanced SOI substrates

Suni, Tommi; Puurunen, Riikka L.; Ylivaara, Oili; Kattelus, Hannu; Henttinen, Kimmo; Ishida, Tadashi; Fujita, Hiroyuki 

2010 

ISBN: 9781566778237 

Implementing ALD layers in MEMS processing

Puurunen, R. L.; Saarilahti, J.; Kattelus, H. 

2007 

ISBN: 9781566775731 

Surface preparation techniques for high-k deposition on Ge substrates

Van Elshocht, Sven; Delabie, Annelies; Brijs, Bert; Caymax, Matty; Conard, Thierry; Onsia, Bart; Puurunen, Riikka; Richard, Olivier; Van Steenbergen, Jan; Zhao, Chao; Meuris, Marc; Heyns, Marc M. 

2005 

Solid State Phenomena 

Trans Tech Publications Ltd. 

ISBN: 390845106X 

ISSN: 1012-0394 

Scaling of Hf-based gate dielectrics - Integration with polysilicon gates

De Gendt, S.; Caymax, M.; Chen, J.; Claes, M.; Conard, T.; Delabie, A.; Deweerd, W.; Kaushik, V.; Kerber, A.; Kubicek, S.; Niwa, M.; Pantisano, L.; Puurunen, R.; Ragnarsson, L.; Schram, T.; Shimamoto, Y.; Tsai, W.; Rohr, E.; Van Elshocht, S.; Vandervorst, W.; Witters, T.; Young, E.; Zhao, C.; Heyns, M. 

2003 

ELECTROCHEMICAL SOCIETY 

ISBN: 1566774055 

Implementation of high-k gate dielectrics - A status update

De Gendt, S.; Chen, J.; Carter, R.; Cartier, E.; Caymax, M.; Claes, M.; Conard, T.; Delabie, A.; Deweerd, W.; Kaushik, V.; Kerber, A.; Kubicek, S.; Maes, J. W.; Niwa, M.; Pantisano, L.; Puurunen, R.; Ragnarsson, L.; Schram, T.; Shimamoto, Y.; Tsai, W.; Rohr, E.; Van Elshocht, S.; Witters, T.; Young, E.; Zhao, C.; Heyns, M. 

2003 

Institute of Electrical and Electronics Engineers Inc. 

ISBN: 4891140372 

Erratum Growth per cycle in atomic layer deposition: A theoretical model (Chemical Vapor Deposition (2003) 9 (249))

Puurunen, Riikka L. 

2004 

Alert